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IDT54FCT810BTDB 查看數據表(PDF) - Integrated Device Technology

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IDT54FCT810BTDB
IDT
Integrated Device Technology IDT
IDT54FCT810BTDB Datasheet PDF : 6 Pages
1 2 3 4 5 6
IDT54/74FCT810BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol
Parameter
Test Conditions(1)
Min. Typ.(2) Max. Unit
ICC
ICCD
IC
Quiescent Power Supply Current VCC = Max.
TTL Inputs HIGH
VIN = 3.4V(3)
Dynamic Power Supply Current(4)
VCC = Max.
Outputs Open
OEA = OEB = GND
50% Duty Cycle
Total Power Supply Current(6)
VCC = Max.
Outputs Open
fo= 25MHz
50% Duty Cycle
OEA = GND, OEB =VCC
VCC = Max.
Outputs Open
fo = 50MHz
50% Duty Cycle
OEA = OEB = GND
VIN = VCC
VIN = GND
VIN = VCC
VIN = GND
VIN = 3.4V
VIN = GND
VIN = VCC
VIN = GND
VIN = 3.4V
VIN = GND
— 0.5 2.0 mA
60 100 µA/
MHz/bit
— 7.5 13 mA
— 7.8 14.0
— 30.0 50.5(5)
— 30.5 52.5(5)
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient.
3. Per TTL driven input; (VIN = 3.4V); all other inputs at VCC or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested.
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC + ICC DHNT + ICCD (fONO)
ICC = Quiescent Current (ICCL, ICCH and ICCZ)
ICC = Power Supply Current for a TTL High Input (VIN = 3.4V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
fO= Output Frequency
NO= Number of Outputs at fO
All currents are in milliamps and all frequencies are in megahertz.
3103 tbl 05
9.4
3

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