IMC010FLSA-ET15 查看數據表（PDF） - Intel

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IMC010FLSA-ET15

SERIES 2 FLASH MEMORY CARDS

Intel 

SERIES 2 FLASH MEMORY CARDS

290434 – 1

Figure 2 Memory Architecture Each Device Pair Consists of Sixteen 64 KWord Blocks

Series 2 Flash Memory Cards offer additional fea-

tures over the Bulk Erase Flash Card product family

(refer to iMC001FLKA iMC002FLKA and

iMC004FLKA data sheets) Some of the more nota-

ble enhancements include high density capability

erase blocking internal write erase automation

erase suspension to read Component Management

Registers that provide software control of device-

level functions and a deep-sleep mode

Erase blocking facilitates solid-state storage applica-

tions by allowing selective memory reclamation Mul-

tiple 64 Kbyte blocks may be simultaneously erased

within the memory card as long as not more than

one block per device is erasing This shortens the

total time required for erasure but requires addition-

al supply current A block typically requires 1 6 sec-

onds to erase Each memory block can be erased

and completely written 100 000 times

Erase suspend allows the system to temporarily in-

terrupt a block erase operation This mode permits

reads from alternate device blocks while that same

device contains an erasing block Upon completion

of the read operation erasure of the suspended

block must be resumed

Write erase automation simplifies the system soft-

ware interface to the card A two-step command se-

quence initiates write or erase operations and pro-

vides additional data security Internal device circuits

automatically execute the algorithms and timings

necessary for data-write or block-erase operations

including verifications for long-term data integrity

While performing either data-write or block-erase

the memory card interface reflects this by bringing

its RDY BSY (Ready Busy) pin low This output

goes high when the operation completes This fea-

ture reduces CPU overhead and allows software

polling or hardware interrupt mechanisms Writing

memory data is achieved in single byte or word in-

crements typically in 6 ms

Read access time is 150 ns or less over the entire

operating temperature range

The Reset-PowerDown mode reduces power con-

sumption to less than 60 mA to help extend battery

life of portable host systems Activated through soft-

ware control this mode optionally affects the entire

flash array (Global Reset-PowerDown Register) or

specific device pairs (Sleep Control Register)

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