IPD025N06N(2014) 查看數據表（PDF） - Infineon Technologies

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IPD025N06N
(Rev.:2014)

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

1Description

Features

•Optimizedforsynchronousrectification

•100%avalanchetested

•Superiorthermalresistance

•N-channel,normallevel

•QualifiedaccordingtoJEDEC1)fortargetapplications

•Pb-freeleadplating;RoHScompliant

•Halogen-freeaccordingtoIEC61249-2-21

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS

60

V

RDS(on),max

2.5

mΩ

ID

90

A

QOSS

81

nC

QG(0V..10V)

71

nC

OptiMOSTMPower-Transistor,60V

IPD025N06N

D-PAK

tab

1

2

3

Drain

Pin 2, Tab

Gate

Pin 1

Source

Pin 3

Type/OrderingCode

IPD025N06N

Package

PG-TO252-3

Marking

025N06N

RelatedLinks

-

1) J-STD20 and JESD22

Final Data Sheet

2

Rev.2.5,2014-07-23

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