IPD025N06N(2014) 查看數據表（PDF） - Infineon Technologies

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IPD025N06N
(Rev.:2014)

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

OptiMOSTMPower-Transistor,60V

IPD025N06N

2Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Parameter

Symbol

Continuous drain current

Pulsed drain current1)

Avalanche energy, single pulse2)

Gate source voltage

Power dissipation

Operating and storage temperature

ID

ID,pulse

EAS

VGS

Ptot

Tj,Tstg

Min.

-

-

-

-

-

-20

-

-

-55

Values

Typ. Max.

-

90

-

90

-

26

-

360

-

210

-

20

-

167

-

3.0

-

175

Unit Note/TestCondition

VGS=10V,TC=25°C

A VGS=10V,TC=100°C

VGS=10V,TC=25°C,RthJA=50K/W

A TC=25°C

mJ ID=90A,RGS=25Ω

V-

W

TC=25°C

TA=25°C,RthJA=50K/W

°C

IEC climatic category;

DIN IEC 68-1: 55/175/56

3Thermalcharacteristics

Table3Thermalcharacteristics

Parameter

Symbol

Thermal resistance, junction - case

Device on PCB,

minimal footprint

Device on PCB,

6 cm² cooling area3)

Soldering temperature, wave and

reflow soldering are allowed

RthJC

RthJA

RthJA

Tsold

Min.

-

Values

Typ. Max.

0.5 0.9

Unit Note/TestCondition

K/W -

-

-

62 K/W -

-

-

40 K/W -

-

-

260 °C Reflow MSL1

1) See figure 3 for more detailed information

2) See figure 13 for more detailed information

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical in still air.

Final Data Sheet

4

Rev.2.5,2014-07-23

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