IPD025N06N(2014) 查看數據表（PDF） - Infineon Technologies
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IPD025N06N Datasheet PDF : 12 Pages
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OptiMOSTMPower-Transistor,60V
IPD025N06N
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge2)
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge2)
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
Values
Typ. Max.
24 -
14 -
13 17
23 -
71 83
4.7 -
62 -
81 102
Unit Note/TestCondition
nC VDD=30V,ID=90A,VGS=0to10V
nC VDD=30V,ID=90A,VGS=0to10V
nC VDD=30V,ID=90A,VGS=0to10V
nC VDD=30V,ID=90A,VGS=0to10V
nC VDD=30V,ID=90A,VGS=0to10V
V VDD=30V,ID=90A,VGS=0to10V
nC VDS=0.1V,VGS=0to10V
nC VDD=30V,VGS=0V
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time2)
Reverse recovery charge
Symbol
IS
IS,pulse
VSD
trr
Qrr
Min.
-
-
-
-
-
Values
Typ. Max.
-
90
-
360
1.0 1.2
83 133
105 -
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=90A,Tj=25°C
ns VR=30V,IF=IS,diF/dt=100A/µs
nC VR=30V,IF=IS,diF/dt=100A/µs
1) See ″Gate charge waveforms″ for parameter definition
2) Defined by design. Not subject to production test
Final Data Sheet
6
Rev.2.5,2014-07-23
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