IW4040BD 查看數據表（PDF） - IK Semicon Co., Ltd
零件编号
产品描述 (功能)
生产厂家
IW4040BD Datasheet PDF : 6 Pages
| |||
IW4040B
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIN
PD
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
-0.5 to +20
V
-0.5 to VCC +0.5
V
-0.5 to VCC +0.5
V
±10
mA
500*1
mW
Ptot Power Dissipation per Output Transistor
Tstg Storage Temperature
TL Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
100
mW
-65 to +150
°C
260
°C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
*1 For TA=-55 to 100°C (package plastic DIP), for TA=-55 to 65°C (package SOIC)
+Derating - Plastic DIP: - 12 mW/°C from 100°С to 125°C
SOIC Package: : - 7 mW/°C from 65°С to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
VIN, VOUT
TA
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Min Max Unit
3.0
18
V
0
VCC
V
-55 +125
°C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or
VOUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open.
Rev. 00
Share Link: 