DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IXBH10N170 查看數據表(PDF) - IXYS CORPORATION

零件编号
产品描述 (功能)
生产厂家
IXBH10N170 Datasheet PDF : 5 Pages
1 2 3 4 5
20
18
16
14
12
10
8
6
4
2
0
1
Fig. 1. Output Characteristics
@ 25 Deg. C
VGE = 17V
15V
13V
11V
9V
7V
2
3
4
5
6
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
20
18
VGE = 17V
15V
16
13V
11V
14
12
9V
10
8
7V
6
4
2
0
1
2
3
4
5
6
7
8
VC E - Volts
10
9
8
7
6
5
4
3
2
6
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter voltage
T J = 25º C
I C = 20A
1 0A
5A
7 8 9 10 11 12 13 14 15
VG E - Volts
© 2003 IXYS All rights reserved
IXBH 10N170
IXBT 10N170
Fig. 2. Extended Output Characteristics
@ 25 deg. C
70
VGE = 17V
60
1 5V
50
40
13V
30
11V
20
9V
10
7V
0
0 2 4 6 8 10 12 14 16
VC E - Volts
Fig. 4. Temperature Dependence of VCE(sat)
1.8
VGE = 15V
1.6
1.4
I C = 32A
1.2
I C= 16A
1
0.8
0.6
-50 -25
I C = 8A
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Admittance
20
17.5
15
12.5
10
7.5
TJ = 125º C
5
25º C
-40º C
2.5
0
4
5
6
7
8
9
VG E - Volts

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]