IXBH10N170 查看數據表（PDF） - IXYS CORPORATION
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IXBH10N170 Datasheet PDF : 5 Pages
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IXBH 10N170
IXBT 10N170
Fig. 7. Transconductance
9
8
TJ = -40º C
25º C
7
125º C
6
5
4
3
2
1
0
0 2.5 5 7.5 10 12.5 15 17.5 20
I C - Amperes
Fig. 9. Dependence of Eoff on RG
15
14
13
I C = 20A
12
TJ = 125º C
11 VGE = 15V
10
VCE = 1360V
9
I C= 10A
8
7
0
20
40
60
80
100
R G - Ohms
30
25
20
15
10
5
0
0.5
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
TJ = 25º C
TJ = 125º C
1
1.5
2
2.5
3
VF - Volts
Fig. 10. Dependence of Eoff on IC
15
14
TJ = 125º C
VGE = 15V
13
VCE = 1360V
12
R G= 100 Ohms
11
10
R G= 10 Ohms
9
8
7
10
12
14
16
18
20
I C - Amperes
Fig. 11. Dependence of Eoff on T emperature
Fig. 12. Gate Charge
17
So lid lines - R G = 100 Ohms
15
Dashed lines - R G = 10 Ohms
15
VC E = 600V
12
I C= 10A
I G= 10mA
13
I C = 20A
9
11
9
VGE = 15V
VCE = 1360V
7
6
3
I C = 10A
5
0
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
0
0
5
10
15
20
25
30
Q G - nanoCoulombs
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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