IXFX52N60Q2 查看數據表（PDF） - IXYS CORPORATION

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IXFX52N60Q2

HiPerFET™ Power MOSFETs Q2-Class

IXYS CORPORATION 

Advance Technical Information

HiPerFETTM

Power MOSFETs

Q2-Class

IXFK52N60Q2

IXFX52N60Q2

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Qg

Low intrinsic Rg, low trr

VDSS =

ID25 =

RDS(on) ≤

trr

≤

600V

52A

115mΩ

250ns

TO-264 (IXFK)

Symbol

VDSS

VDGR

VGSS

VGSM

ID25

IDM

IA

EAS

dV/dt

PD

TJ

TJM

Tstg

TL

TSOLD

Md

FC

Weight

Test Conditions

TJ = 25°C to 150°C

TJ = 25°C to 150°C, RGS = 1MΩ

Continuous

Transient

TC = 25°C

TC = 25°C, pulse width limited by TJM

TC = 25°C

TC = 25°C

IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C

TC = 25°C

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

Mounting torque (IXFK)

Mounting force

(IXFX)

TO-264

PLUS247

Maximum Ratings

600

V

600

V

± 30

V

± 40

V

52

A

208

A

52

A

4

J

20

V/ns

735

-55 ... +150

150

-55 ... +150

300

260

1.13/10

20..120 /4.5..27

10

6

W

°C

°C

°C

°C

°C

Nm/lb.in.

N/lb.

g

g

Symbol

BVDSS

VGS(th)

IGSS

IDSS

RDS(on)

Test Conditions

Characteristic Values

(TJ = 25°C unless otherwise specified)

Min. Typ. Max.

VGS = 0V, ID = 3mA

600

V

VDS = VGS, ID = 8mA

VGS = ± 30V, VDS = 0V

3.0

5.5

V

± 200 nA

VDS = VDSS

VGS = 0V

TJ = 125°C

VGS = 10V, ID = 0.5 • ID25, Note 1

25 μA

3 mA

115 mΩ

G

D

S

PLUS247 (IXFX)

(TAB)

G = Gate

S = Source

(TAB)

D = Drain

TAB = Drain

Features

• Double metal process for low gate

resistance

• International standard packages

• Epoxy meet UL 94 V-0, flammability

classification

• Avalanche energy and current rated

• Fast intrinsic Rectifier

Advantages

• Easy to mount

• Space savings

• High power density

© 2008 IXYS CORPORATION,All rights reserved

DS98982B(05/08)

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