IXGH50N60B2 查看數據表（PDF） - IXYS CORPORATION
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IXGH50N60B2 Datasheet PDF : 5 Pages
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Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = 40 A; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 5 Ω
Inductive load, TJ = 125°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 5 Ω
(TO-247)
40
55
S
3500
pF
240
pF
50
pF
140
nC
23
nC
44
nC
18
25
190
65
0.55
ns
ns
300 ns
ns
0.85 mJ
18
ns
25
ns
0.45
mJ
290
ns
140
ns
1.55
mJ
0.31 K/W
0.25
K/W
IXGH 50N60B2
IXGT 50N60B2
TO-247 AD Outline
∅P
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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