IXGH50N60B2 查看數據表（PDF） - IXYS CORPORATION
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IXGH50N60B2 Datasheet PDF : 5 Pages
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IXGH 50N60B2
IXGT 50N60B2
Fig. 7. Transconductance
80
70 TJ = -40ºC
25ºC
60
125ºC
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180 200
I C - Amperes
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
5
Fig. 8. Dependence of Turn-Off
Energy on RG
TJ = 125ºC
VGE = 15V
VCE = 480V
IC = 80A
IC = 40A
IC = 20A
10 15 20 25 30 35 40 45 50
R G - Ohms
Fig. 9. Dependence of Turn-Off
Energy on IC
4
RG = 5Ω
3. 5
RG = 24.4 Ω - - - -
VGE = 15V
3
VCE = 480V
2. 5
TJ = 125ºC
2
1. 5
1
TJ = 25ºC
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
4
RG = 5Ω
3.5
RG = 24.4Ω - - -
VGE = 15V
3
VCE = 480V
IC = 80A
2.5
2
1.5
IC = 40A
1
0. 5
0
20
30
40
50
60
70
80
I C - Amperes
0.5
IC = 20A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
1000
500
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on RG
td(off)
tfi - - - - - -
TJ = 125ºC
VGE = 15V
VCE = 480V
IC = 80A
IC = 40A
IC = 20A
Fig. 12. Dependence of Turn-Off
Sw itching Tim e on IC
400
350
300
td(off)
tfi - - - - - -
RG = 5Ω
VGE = 15V
250
VCE = 480V
TJ = 125ºC
200
150
100
TJ = 25ºC
50
100
5 10 15 20 25 30 35 40 45 50
R G - Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
0
20
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117
30
40
50
60
70
80
I C - Amperes
5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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