CZT2955 查看數據表（PDF） - KEXIN Industrial

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CZT2955

2.0W Surface Mount Complementary PNP Silicon Power Transistor

KEXIN Industrial 

SMD Type

TransistIoCrs

2.0W Surface Mount Complementary

PNP Silicon Power Transistor

KZT2955 (CZT2955)

Features

High current (max. 6A).

Low voltage (max. 60V).

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector - emitter votage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Power dissipation

Thermal resistance,Junctiion-to-ambient

Junction temperature

Storage temperature

SOT-223

6.50+0.2

-0.2

Unit: mm

3.50+0.2

-0.2

3.00+0.1

-0.1

4

1

2

3

2.9

4.6

0.70+0.1

-0.1

0.90+0.2

-0.2

7.00+0.3

-0.3

1 Base

2 Collector

3 Emitter

4 Collector

Symbol

VCBO

VCER

VCEO

VEBO

IC

IB

PD

R JA

Tj

Tstg

Rating

-100

-70

-60

-7

-6

-3

2

62.5

150

-65 to +150

Unit

V

V

V

V

A

A

W

/W

Electrical Characteristics Ta = 25

Parameter

Collector to emitter breakdown voltage

Collector to emitter breakdown voltage

Collctor cutoff current

Emitter cutoff current

DC current gain

Collector to emitter saturation voltage

Base to emitter ON voltage

Transition frequency

Symbol

Testconditons

Min Typ Max Unit

VCEO IC=-30mA

-60

V

VCER IC=-30mA,RBE=100

-70

V

ICEO VCE=-30V

-700

A

ICEV VCE=-100V,VEB=-1.5V

1.0 mA

IEBO VEB = -7.0 V

-5.0 m A

IC =- 4.0A; VCE =-4.0 V

hFE

IC = -6.0A; VCE = -4.0V

20

70

5.0

VCE(sat) IC = -4.0A; IB =- 400mA

-1.1 V

VBE(on) VCE=-4.0V,IC=-4.0A

-1.5 V

fT IC=- 500mA; VCE =-10V; f = 1.0 MHz 2.5

MHz

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