K6E0808C1C-TC12 查看數據表（PDF） - Samsung
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K6E0808C1C-TC12 Datasheet PDF : 8 Pages
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K6E0808C1C-C
PRELIMINARY
CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
Parameter
Voltage on Any Pin Relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Symbol
VIN, VOUT
VCC
PD
TSTG
TA
Rating
-0.5 to 7.0
-0.5 to 7.0
1.0
-65 to 150
0 to 70
Unit
V
V
W
°C
°C
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC
4.5
5.0
5.5
V
VSS
0
0
0
V
VIH
2.2
-
VCC+0.5**
V
VIL
-0.5*
-
0.8
V
* VIL(Min) = -2.0(Pulse Width≤10ns) for I≤20mA
** VIH(Max) = VCC+2.0V(Pulse Width≤10ns) for I≤20mA
DC AND OPERATING CHARACTERISTICS(TA=0 to 70°C,VCC=5.0V±10% unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Symbol
Test Conditions
Min
Max
Unit
ILI
VIN = VSS to VCC
-2
2
µA
ILO
CS=VIH or OE=VIH or WE=VIL
VOUT = VSS to VCC
-2
2
µA
ICC
Min. Cycle, 100% Duty
CS=VIL, VIN = VIH or VIL,
IOUT=0mA
12ns
-
15ns
-
20ns
-
165
mA
150
140
Standby Current
Output Low Voltage Level
Output High Voltage Level
ISB
ISB1
VOL
VOH
VOH1*
Min. Cycle, CS=VIH
f=0MHz, CS≥VCC-0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
IOL=8mA
IOH=-4mA
IOH1=0.1mA
-
40
mA
-
2
mA
-
0.4
V
2.4
-
V
-
3.95
V
* VCC=5.0V±5%, Temp.=25°C
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
CIN
Test Conditions
MIN
VI/O=0V
-
VIN=0V
-
Max
8
7
Unit
pF
pF
* Capacitance is sampled and not 100% tested.
-3-
Rev 4.0
February 1998
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