K6E0808C1C-TC12 查看數據表（PDF） - Samsung
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K6E0808C1C-TC12 Datasheet PDF : 8 Pages
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K6E0808C1C-C
WRITE CYCLE
Parameter
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
PRELIMINARY
CMOS SRAM
Symbol
tWC
tCW
tAS
tAW
tWP
tWP1
tWR
tWHZ
tDW
tDH
tOW
K6E0808C1C-12
Min
Max
12
-
9
-
0
-
9
-
9
-
12
-
0
-
0
6
7
-
0
-
0
-
K6E0808C1C-15
Min
Max
15
-
11
-
0
-
12
-
12
-
15
-
0
-
0
8
8
-
0
-
0
-
K6E0808C1C-20
Unit
Min
Max
20
-
ns
13
-
ns
0
-
ns
13
-
ns
13
-
ns
20
-
ns
0
-
ns
0
8
ns
10
-
ns
0
-
ns
0
-
ns
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
Address
Data Out
tRC
tAA
tOH
Previous Valid Data
Valid Data
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS
OE
Data out
VCC
ICC
Current
ISB
tRC
tAA
tCO
tOE
tOLZ
tLZ(4,5)
tPU
50%
tHZ(3,4,5)
tOHZ
Valid Data
tOH
tPD
50%
-5-
Rev 4.0
February 1998
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