KM110B/2 查看數據表（PDF） - Philips Electronics

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KM110B/2

Magnetic field sensor

Philips Electronics 

Philips Semiconductors

Magnetic field sensor

Preliminary specification

KM110B/2

DESCRIPTION

The KM110B/2 is a sensitive magnetic field sensor,

employing the magnetoresistive effect in thin-film

permalloy. A Ferroxdure FXD100 magnet mounted on the

back of the sensor package provides an auxiliary field of

3.6 kA/m in the x-direction of the sensor.

Typical applications for the KM110B/2 are current

measurement, linear position measurement, rotational

speed detection of magnetic pole wheels as well as

magnetic field measurement. The sensor can be operated

at any frequency between DC and 1 MHz.

PINNING

PIN

1

2

3

4

SYMBOL

+VO

GND

−VO

+VCC

DESCRIPTION

output voltage

ground

output voltage

supply voltage

y

x

1 23 4

MLB874

Marking: KMZ10B PHDxx.

Fig.1 Simplified outline.

QUICK REFERENCE DATA

SYMBOL

VCC

Tbridge

Hy

PARAMETER

DC supply voltage

bridge operating temperature

magnetic field strength

S

sensitivity

Rbridge

Voffset

bridge resistance

offset voltage

MIN.

−

−40

−2.2

−

1.6

−0.5

TYP.

5

−

−

3.6

2.1

−

MAX.

−

150

+2.2

−

2.6

+0.5

UNIT

V

°C

kA/m

m-k---A--V----⁄-⁄--m-V--

kΩ

mV/V

CIRCUIT DIAGRAM

handbook, full pagewidth

MLB875

November 1994

4

3

2

1

VCC –VO

GND

+VO

Fig.2 Simplified circuit diagram.

2

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