KM4100IC8TR3 查看數據表（PDF） - Fairchild Semiconductor
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KM4100IC8TR3 Datasheet PDF : 11 Pages
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KM4100/KM4101
DATA SHEET
KM4100/KM4101 Electrical Characteristics (Vs = +5V, G = 2, RL = 2kΩ to Vs/2; unless noted)
Parameters
Conditions
TYP
Min & Max UNITS
Case Temperature
+25°C
+25°C
Frequency Domain Response
-3dB bandwidth
G = +1, Vo = 0.05Vpp
260
G = +2, Vo = 0.2Vpp
90
full power bandwidth
G = +2, Vo = 2Vpp
40
gain bandwidth product
90
MHz
MHz
MHz
MHz
Time Domain Response
rise and fall time
settling time to 0.1%
overshoot
slew rate
0.2V step
2V step
0.2V step,
5V step, G = -1
3.6
ns
40
ns
7
%
150
V/µs
Distortion and Noise Response
2nd harmonic distortion
3rd harmonic distortion
THD
input voltage noise
input current noise
2Vpp, 5MHz
2Vpp, 5MHz
2Vpp, 5MHz
>1MHz
>1MHz
70
dBc
78
dBc
68
dB
16
nV/√Hz
1.3
pA/√Hz
DC Performance
input offset voltage
average drift
input bias current
average drift
input offset current
power supply rejection ratio
DC
open loop gain
quiescent current
quiescent current (disabled)
1.4
±8
mV
10
µV/°C
3
±8
µA
7
nA/°C
0
±0.8
µA
57
52
dB
78
68
dB
4.2
5.2
mA
127
170
µA
Input Characteristics
input resistance
input capacitance
input common mode voltage range
common mode rejection ratio
Disable Characteristics (KM4101)
turn on time
turn off time
off isolation
Output Characteristics
output voltage swing
linear output current
short circuit output current
power supply operating range
DC, Vcm = 0V to Vs - 1.5
5MHz, RL = 100Ω
RL = 10kΩ to Vs/2
RL = 2kΩ to Vs/2
RL = 150Ω to Vs/2
-40°C to +85°C
4.3
MΩ
1.5
pF
-0.3 to 3.8
V
87
72
dB
150
ns
25
ns
75
dB
0.027 to 4.97
V
0.036 to 4.953 0.1 to 4.9
V
0.12 to 4.8 0.3 to 4.625 V
±60
mA
±55
mA
±90
mA
5
2.5 to 5.5
V
NOTES
1
1
1
1
1
2
2
2
2
2
2
2
2
2
2
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels
are determined from tested parameters.
NOTES:
1) Rf = 1kΩ was used used for optimal performance. (For G = +1, Rf = 0)
2) 100% tested at +25°C.
REV. 1A February 2001
3
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