LH28F160S5HR-L90 查看數據表（PDF） - Sharp Electronics

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LH28F160S5HR-L90

16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)

Sharp Electronics 

block erase, full chip erase, (multi) word/byte write

or block lock-bit configuration. STS High Z indicates

that the WSM is ready for a new command, block

erase is suspended and (multi) word/byte write are

inactive, (multi) word/byte write are suspended, or

the device is in deep power-down mode. The other

3 alternate configurations are all pulse mode for

use as a system interrupt.

The access time is 70 ns (tAVQV) at the VCC supply

voltage range of 4.75 to 5.25 V over the temperature

range, 0 to +70°C (LH28F160S5-L)/– 40 to +85°C

(LH28F160S5H-L). At 4.5 to 5.5 V VCC, the access

time is 80 ns/100 ns (LH28F160S5-L70/S5-L10) or

90 ns/100 ns (LH28F160S5H-L70/S5H-L10).

The Automatic Power Saving (APS) feature

substantially reduces active current when the

device is in static mode (addresses not switching).

In APS mode, the typical ICCR current is 1 mA at

5 V VCC.

When either CE0# or CE1#, and RP# pins are at

VCC, the ICC CMOS standby mode is enabled.

When the RP# pin is at GND, deep power-down

mode is enabled which minimizes power

consumption and provides write protection during

reset. A reset time (tPHQV) is required from RP#

switching high until outputs are valid. Likewise, the

device has a wake time (tPHEL) from RP#-high until

writes to the CUI are recognized. With RP# at

GND, the WSM is reset and the status register is

cleared.

LH28F160S5-L/S5H-L

1FFFFF

1F0000

1EFFFF

1E0000

1DFFFF

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1CFFFF

1C0000

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1B0000

1AFFFF

1A0000

19FFFF

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100000

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040000

03FFFF

030000

02FFFF

020000

01FFFF

010000

00FFFF

000000

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Fig. 1 Memory Map

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