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M12GZ47 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
M12GZ47
BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
Toshiba
M12GZ47 Datasheet PDF : 5 Pages
1
2
3
4
5
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off
−
State Current
I
II
Gate Trigger Voltage
III
IV
I
SM12GZ47
II
SM12JZ47
III
Gate Trigger
IV
Current
I
SM12GZ47A
II
SM12JZ47A
III
IV
Peak On
−
State Voltage
Gate Non
−
Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of
Rise of Off
−
State
Voltage
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
Critical Rate of
Rise of Off
−
State
Voltage at
Commutation
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
I
DRM
V
DRM
= Rated
―
―
20
µA
T2 (+) , Gate (+)
―
―
1.5
V
GT
V
D
= 12V,
R
L
= 20
Ω
T2 (+) , Gate (
−
)
―
―
1.5
V
T2 (
−
) , Gate (
−
)
―
―
1.5
T2 (
−
) , Gate (+)
―
―
―
T2 (+) , Gate (+)
―
―
30
T2 (+) , Gate (
−
)
―
―
30
T2 (
−
) , Gate (
−
)
―
―
30
I
GT
V
D
= 12V,
R
L
= 20
Ω
T2 (
−
) , Gate (+)
―
―
―
mA
T2 (+) , Gate (+)
―
―
20
T2 (+) , Gate (
−
)
―
―
20
T2 (
−
) , Gate (
−
)
―
―
20
T2 (
−
) , Gate (+)
―
―
―
V
TM
V
GD
I
H
R
th (j
−
c)
I
TM
= 17A
V
D
= Rated, Tc = 125°C
V
D
= 12V, I
TM
= 1A
Junction to Case, AC
―
―
1.5
V
0.2
―
―
V
―
―
50
mA
―
―
3.0 °C / W
dv / dt
V
DRM
= Rated, T
j
= 125°C
Exponential Rise
―
300
―
V / µs
―
200
―
(dv / dt) c
V
DRM
= 400V, T
j
= 125°C
(di / dt) c =
−
6.5A / ms
10
―
―
V / µs
4
―
―
MARKING
*NUMBER
SYMBOL
*1
TOSHIBA PRODUCT MARK
SM12GZ47, SM12GZ47A
*2
TYPE
SM12JZ47, SM12JZ47A
*3
SM12GZ47A, SM12JZ47A
MARK
M12GZ47
M12JZ47
A
Example
*4
8A: January 1998
8B: February 1998
8L: December 1998
2
2001-07-10
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