MAC997 查看數據表（PDF） - ON Semiconductor

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MAC997

Sensitive Gate Triacs Silicon Bidirectional Thyristors

ON Semiconductor 

MAC997 Series

(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Maximum Lead Temperature for Soldering Purposes for 10 Seconds

Symbol

RθJC

RθJA

TL

Max

75

200

260

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

ON CHARACTERISTICS

TJ = 25°C

TJ = +110°C

IDRM, IRRM

—

—

—

—

Peak On−State Voltage

(ITM = ".85 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MAC997A6,A8

MT2(+), G(−)

MT2(−), G(−)

MT2(−), G(+)

VTM

—

—

IGT

—

—

—

—

—

—

—

—

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

MT2(−), G(+)

MAC997B6,B8

—

—

—

—

—

—

—

—

Unit

°C/W

°C/W

°C

Max

Unit

10

μA

100

μA

1.9

Volts

mA

5.0

5.0

5.0

7.0

3.0

3.0

3.0

5.0

Latching Current (VD = 12 V, IG = 10 mA)

MT2(+), G(+) All Types

MT2(+), G(−) All Types

MT2(−), G(−) All Types

MT2(−), G(+) All Types

Gate Trigger Voltage (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+) All Types

MT2(+), G(−) All Types

MT2(−), G(−) All Types

MT2(−), G(+) All Types

Gate Non−Trigger Voltage

(VD = 12 V, RL = 100 Ohms, TJ = 110°C)

All Four Quadrants

Holding Current

(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)

Turn-On Time

(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current

(VD = 400 V, ITM = .84 A, Commutating dv/dt = 1.5 V/μs, Gate Open,

TJ = 110°C, f = 250 Hz, with Snubber)

Critical Rate of Rise of Off−State Voltage

(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C)

Repetitive Critical Rate of Rise of On−State Current

Pulse Width = 20 μs, IPKmax = 15 A, diG/dt = 1 A/μs, f = 60 Hz

IL

VGT

VGD

IH

tgt

di/dt(c)

dv/dt

di/dt

mA

—

1.6

15

—

10.5

20

—

1.5

15

—

2.5

15

Volts

—

.66

2.0

—

.77

2.0

—

.84

2.0

—

.88

2.5

0.1

—

—

Volts

—

1.5

10

mA

—

2.0

—

μs

1.6

—

—

A/ms

20

60

—

V/μs

—

—

10

A/μs

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