MAX4959EUB 查看數據表（PDF） - Maxim Integrated
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MAX4959EUB Datasheet PDF : 17 Pages
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High-Voltage OVP with Battery Switchover
ABSOLUTE MAXIMUM RATINGS
IN, SOURCE1, GATE1, GATE2, to GND ................-0.3V to +30V
VDD to GND ..............................................................-0.3V to +6V
UVS, OVS, CB to GND .............................................-0.3V to +6V
Continuous Power Dissipation (TA = +70°C)
10-pin µDFN (derate 5.0mW/°C above +70°C) ...........403mW
10-pin µMAX (derate 5.6mW/°C above +70°C) ...........444mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VIN = +19V, TA = -40°C to +85°C, unless otherwise noted, CVDD = 100nF. Typical values are at TA = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
IN
Input Voltage Range
Overvoltage Adjustable Trip
Range
VIN
OVLO
(Note 2)
4
28
6
28
Overvoltage Comp Reference
OVS Input Leakage Current
Overvoltage Trip Hysteresis
OVREF
OVILKG
OVHYS
VIN rising edge
1.18
-100
1.228
1
1.276
+100
Undervoltage Adjustable Trip
Range
UVLO (Note 2)
5
28
Undervoltage Comp Reference
UVS Input Leakage Current
Undervoltage Trip Hysteresis
Internal Undervoltage Trip Level
UVREF
UVILKG
UVHYS
INTUVREF
VIN falling edge
VIN falling edge
1.18
-100
4.1
1.228
1
4.4
1.276
+100
4.7
Internal Undervoltage Trip
Hysteresis
INTUVHYS
1
Power-On Trip Level
Power-On Trip Hysteresis
POTL VDD > +3V, IN rising edge
POTLHYS
0.5 0.75
1
10
IN Supply Current
VDD
VDD Voltage Range
VDD Undervoltage Lockout
IIN
VIN = +19V, VOVS < OVREF and
VUVS > UVREF
VDD
VDDUVLO VDD falling edge
100
300
2.7
5.5
1.55
2.40
VDD Undervoltage Lockout
Hysteresis
VDDUVLOHYS
50
VDD Supply Current
IVDD VDD = +5V, VIN = 0V
10
GATE_
GATE1 Open-Drain MOS RON
Resistance
RON
VCB = 0V, VIN = 19V, VOVS < OVREF and
VUVS > UVREF, IGATE_ = 0.5mA (MAX4959)
1
GATE2 Open-Drain MOS RON
Resistance
RON VCB = 3V, IGATE_ = 0.5mA
1
UNITS
V
V
V
nA
%
V
V
nA
%
V
%
V
%
µA
V
V
mV
µA
kΩ
kΩ
2 _______________________________________________________________________________________
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