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MBR0520LT1 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
MBR0520LT1
ONSEMI
ON Semiconductor ONSEMI
MBR0520LT1 Datasheet PDF : 4 Pages
1 2 3 4
MBR0520LT1, MBR0520LT3
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction to Ambient (Note 1.)
Thermal Resistance — Junction to Lead
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2.)
(iF = 0.1 Amps)
(iF = 0.5 Amps)
Maximum Instantaneous Reverse Current (Note 2.)
(VR = 10 V)
(Rated dc Voltage = 20 V)
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
2. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
Symbol
RθJA
RθJL
Value
206
150
Unit
°C/W
°C/W
vF
TJ = 25°C TJ = 100°C
Volts
0.300
0.385
0.220
0.330
IR
TJ = 25°C TJ = 100°C
mA
75 µA
250 µA
5 mA
8 mA
1
TJ = 100°C
75°C 25°C -ā25°C
0.1
10,000
1000
TJ = 100°C
75°C
0.01
0.1
0.2
0.3
0.4
0.5
v, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
0
5
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
200
100
150
10
TJ = +ā25°C
100
1
-ā25°C
50
0.1
0
0.01
0
5
10
15
20
25
0
5
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
Figure 4. Typical Reverse Current
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