MMBT5087(1997) 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
MMBT5087 Datasheet PDF : 6 Pages
| |||
Discrete POWER & Signal
Technologies
2N5086
2N5087
MMBT5086
MMBT5087
C
C
BE
TO-92
E
SOT-23
B
Mark: 2P / 2Q
PNP General Purpose Amplifier
This device is designed for low level, high gain, low noise general
purpose amplifier applications at collector currents to 50 mA.
Sourced from Process 62.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
50
VCBO
Collector-Base Voltage
50
VEBO
Emitter-Base Voltage
5.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
100
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA= 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N5086
2N5086
625
5.0
83.3
200
*MMBT5086
*MMBT5087
350
2.8
357
Units
mW
mW /°C
°C/W
°C/W
ã 1997 Fairchild Semiconductor Corporation
Share Link: 