MMDF2P02E(2011) 查看數據表（PDF） - ON Semiconductor

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MMDF2P02E
(Rev.:2011)

Power MOSFET 2 Amps, 25 Volts

ON Semiconductor 

MMDF2P02E

100

VGS = 20 V

SINGLE PULSE

10 TC = 25°C

Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″

thick single sided) with one die operating, 10s max.

100 ms 10 ms

10 ms

1

dc

0.1

0.01

0.1

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

1

10

100

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

280

I pk = 7 A

240

200

160

120

80

40

0

25

50

75

100

125

150

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 13. Maximum Avalanche Energy versus

Starting Junction Temperature

TYPICAL ELECTRICAL CHARACTERISTICS

10

1

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

0.001

1.0E-05

SINGLE PULSE

1.0E-04

1.0E-03

Normalized to qja at 10s.

Chip 0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W

0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F Ambient

1.0E-02

1.0E-01

t, TIME (s)

1.0E+00

Figure 14. Thermal Response

1.0E+01

1.0E+02

1.0E+03

IS

tp

di/dt

trr

ta

tb

0.25 IS

IS

TIME

Figure 15. Diode Reverse Recovery Waveform

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