MMSF10N02Z 查看數據表（PDF） - Motorola => Freescale
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MMSF10N02Z Datasheet PDF : 10 Pages
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MMSF10N02Z
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0)
(3)
V(BR)DSS
Vdc
20
—
—
—
17
—
mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk ≥ 2.0)
(3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
µAdc
—
—
10
—
—
100
—
0.6
1.5
µAdc
Vdc
0.5
0.72
1.1
—
2.86
—
mV/°C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 10 Adc)
(VGS = 2.7 Vdc, ID = 5.0 Adc)
(Cpk ≥ 2.0)
(3)
Forward Transconductance (VDS = 9.0 Vdc, ID = 5.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS = 4.0 Vdc, RG = 10 Ω)
Fall Time
Gate Charge
(VDS = 16 Vdc, ID = 10 Adc,
VGS = 4.0 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
mΩ
—
13
15
—
16
19
11
14
—
Mhos
—
1150
1225
pF
—
775
810
—
375
480
—
65
75
ns
—
360
440
—
325
640
—
575
860
—
26
32
nC
—
2.5
—
—
13
—
—
9.0
—
Vdc
—
0.83
1.2
—
0.68
—
Reverse Recovery Time
(IS = 10 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Storage Charge
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Max limit – Typ
Cpk = 3 x SIGMA
trr
ta
tb
QRR
—
765
—
ns
—
240
—
—
530
—
—
8.7
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data
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