MMSF7P03HD(2002) 查看數據表（PDF） - ON Semiconductor
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MMSF7P03HD Datasheet PDF : 12 Pages
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MMSF7P03HD
TYPICAL ELECTRICAL CHARACTERISTICS
12
10 V
10 6.0 V
4.5 V
8.0 4.3 V
4.1 V
6.0
3.9 V
3.7 V
3.5 V
TJ = 25°C
VGS = 3.3 V
3.1 V
4.0
2.9 V
2.0
0
0
2.7 V
2.5 V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
12
10
VDS . 10 V
8.0
6.0
100°C
4.0
25°C
2.0
TJ = – 55°C
0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.30
0.25
TJ = 25°C
ID = 7.0 A
0.20
0.050
0.045
0.040
TJ = 25°C
VGS = 4.5 V
0.15
0.035
0.10
0.030
10 V
0.05
0.025
0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
0.020
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.6
1.4 VGS = 10 V
1.2
1.0
0.8
0.6
0.4
0.2
0
–50 –25 0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1000
VGS = 0 V
100
10
TJ = 125°C
100°C
1.0
0
5.0
10
15
20
25
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage
Current versus Voltage
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