MPA201
ELECTRICAL CHARACTERISTICS OF SINGLE DIE2 @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN
BVEBO
Emitter to Base Breakdown
IE = 1 mA
3.5
BVCES
Collector to Emitter Breakdown IC = 10 mA
50
BVCEO
Collector to Emitter Breakdown IC = 10 mA
22
hFE
DC – Current Gain
IC = 100 mA, VCE = 5 V
20
COB
Output Capacitance
F = 1MHz, VCB = 28V
-
TYP
-
-
-
-
2.0
MAX
-
-
-
-
3.0
UNITS
V
V
V
-
pF
NOTES: 2. Electrical characteristics are valid only with the single die inside of MPA201, the final unit is not capable of being tested.
Internal Schematic of MPA201
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.