MPSA12P 查看數據表（PDF） - Zetex => Diodes

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MPSA12P

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

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NPN SILICON PLANAR MEDIUM

POWER DARLINGTON TRANSISTOR

ISSUE 2 – NOV 93

MPSA12P

E

B

C

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at Tamb=25°C

Operating and Storage Temperature Range

SYMBOL

VCES

VEBO

IC

Ptot

Tj:Tstg

TO92

VALUE

20

10

500

625

-55 to +150

UNIT

V

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Emitter

Breakdown Voltage

V(BR)CES 20

V

IC=100µA, IB=0*

Collector Cut-Off

ICES

Current

100 nA

VCE=15V, VBE=0

Collector Cut-Off

Current

ICBO

100 nA

VCB=15V, IE=0

Emitter Cut-Off Current IEBO

Collector-Emitter

Saturation Voltage

VCE(sat)

100 nA

1

V

VEB=10V, IC=0

IC=10mA, IB=0.01mA

Base-Emitter

Saturation Voltage

VBE(on)

1.4

V

IC=10mA, VCE=5V*

Static Forward Current hFE

20K

Transfer Ratio

IC=10mA, VCE=5V*

*Measured under pulsed conditions. Pulse width =300µs. Duty cycle ≤ 2%

3-77

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