MRF517 查看數據表（PDF） - Microsemi Corporation

零件编号

产品描述 (功能)

生产厂家

MRF517

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation 

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

MRF517

Features

• Silicon NPN, To-39 packaged VHF/UHF Transistor

• Gpe = 10 dB (typ) @ 60 mA, 300 MHz

• 3 GHz Current-Gain Bandwidth Product (min) @ 60mA

• Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz

1. Emitter

2. Base

3. Collector

TO-39

DESCRIPTION:

Silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise broadband amplifier; pre-

driver, driver, and output stages.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

Thermal Data

P

D

Total Device Dissipation @ TA = 25ºC

Derate above 25ºC

Value

20

35

3.0

150

2.5

0.02

Unit

Vdc

Vdc

Vdc

mA

Watts

mW/ ºC

MSC1302.PDF 10-25-99

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