MRF517 查看數據表（PDF） - Microsemi Corporation

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MRF517

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation 

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

STATIC

(off)

Symbol

Test Conditions

BVCER

BVCEO

BVCBO

BVEBO

ICEO

(on)

HFE

Collector-Emitter Breakdown Voltage

(IC = 5.0 mAdc, RBE = 330 ohms)

Collector-Emitter Breakdown Voltage

(IC=5.0 mAdc, IB=0)

Collector-Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

Emitter-Base Breakdown Voltage

(IE = 100 µAdc, IC = 0)

Collector Cutoff Current

(VCE = 15 Vdc, IB = 0)

DC Current Gain

(IC = 60 mAdc, VCE = 10 Vdc)

DYNAMIC

Symbol

Test Conditions

fT

Current-Gain - Bandwidth Product

(IC = 60 mAdc, VCE = 15 Vdc, f = 200 MHz)

Cob

Output Capacitance

(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)

MRF517

Min.

25

20

30

3.0

-

Value

Typ.

-

-

-

-

-

Max.

-

-

-

-

100

50

-

150

Unit

Vdc

Vdc

Vdc

Vdc

µAdc

-

Min.

3

-

Value

Typ.

4

3.0

Max.

-

4.5

Unit

GHz

pF

MSC1302.PDF 10-25-99

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