MRF517 查看數據表（PDF） - Microsemi Corporation

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MRF517

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation 

FUNCTIONAL

Symbol

Test Conditions

NF

Broadband Noise Figure

(IC = 50 mAdc, VCE = 15Vdc, f = 300 MHz

Gpe

Common Emitter Amplifier Power Gain

(VCE = 15 Vdc, IC = 60 mAdc, f = 300MHz

MRF517

Value

Min.

Typ.

Max.

Unit

-

-

7.5

dB

9

10

-

dB

PIN

(RS=50 OHMS)

+VBB

POUT

(RL= 50 OHMS)

+15Vdc

Figure 1. 40 to 330 MHz Broadband Test Schematic

MSC1302.PDF 10-25-99

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