MT58L1MY18D 查看數據表（PDF） - Micron Technology

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MT58L1MY18D

16Mb SYNCBURST™ SRAM

Micron Technology 

ADVANCE

16Mb: 1 MEG x 18, 512K x 32/36

PIPELINED, DCD SYNCBURST SRAM

FBGA PIN DESCRIPTIONS (continued)

x18

x32/x36 SYMBOL TYPE

DESCRIPTION

3C, 3D, 3E,

3F, 3G, 3J,

3K, 3L, 3M,

3N, 9C, 9D,

9E, 9F, 9G,

9J, 9K, 9L,

9M, 9N

3C, 3D, 3E,

3F, 3G, 3J,

3K, 3L, 3M,

3N, 9C, 9D,

9E, 9F, 9G,

9J, 9K, 9L,

9M, 9N

VDDQ Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and

Operating Conditions for range.

2H, 4C, 4N, 5C, 2H, 4C, 4N, 5C, VSS Supply Ground: GND.

5D, 5E 5F, 5D, 5E 5F,

5G, 5H, 5J, 5G, 5H, 5J,

5K, 5L, 5M, 5K, 5L, 5M,

6C, 6D, 6E, 6F, 6C, 6D, 6E, 6F,

6G, 6H, 6J, 6G, 6H, 6J,

6K, 6L, 6M, 6K, 6L, 6M,

7C, 7D, 7E, 7C, 7D, 7E,

7F, 7G, 7H, 7F, 7G, 7H,

7J, 7K, 7L, 7J, 7K, 7L,

7M, 7N, 8C, 8N 7M, 7N, 8C, 8N

5P, 5R, 7P, 7R 5P, 5R, 7P, 7R DNU

– Do Not Use: These signals may either be unconnected or wired to

GND to improve package heat dissipation.

1A, 1B, 1C, 1A, 1B, 1P,

NC

1D, 1E, 1F, 2C, 2N, 2P,

1G, 1P, 2C, 2R, 3H, 5N,

2J, 2K, 2L, 9H, 10C, 10H,

2M, 2N, 2P, 10N, 11A, 11B

2R, 3H, 4B,

5A, 5N, 9H,

10C, 10D, 10E,

10F, 10G, 10H,

10N, 11B, 11J,

11K, 11L,

11M, 11N

– No Connect: These signals are not internally connected and

may be connected to ground to improve package heat

dissipation.

16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM

MT58L1MY18D_2.p65 – Rev 7/00

10

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2000, Micron Technology, Inc.

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