MTB06N03H8 查看數據表（PDF） - Cystech Electonics Corp.
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MTB06N03H8 Datasheet PDF : 6 Pages
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CYStech Electronics Corp.
Spec. No. : C710H8
Issued Date : 2009.05.07
Revised Date :
Page No. : 3/6
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Qg (VGS=10V) *1, 2
-
48
-
Qg (VGS=4.5V) *1, 2
-
Qgs *1, 2
-
27
6
-
-
nC VDS=15V, VGS=10V, ID=30A
Qgd *1, 2
-
16
-
td(ON) *1, 2
-
20
-
tr *1, 2
td(OFF) *1, 2
-
15
-
ns VDS=15V, ID=24A, VGS=10V,
-
65
-
RGS=2.7Ω
tf *1, 2
-
10
-
Rg
-
1.2
-
Ω VGS=15mV, VDS=0V, f=1MHz
Source-Drain Diode
IS *1
ISM *3
-
-
75
-
-
150
A
VSD *1
-
-
1.3
V
trr
-
32
-
ns
Qrr
-
12
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
IF=IS, VGS=0V
IF=IS, dIF/dt=100A/μs
Recommended Footprint
MTB06N03H8
unit : mm
CYStek Product Specification
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