MTB36N06E 查看數據表（PDF） - Motorola => Freescale
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MTB36N06E Datasheet PDF : 10 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
MTB36N06E
80
10 V
TJ = 25°C
9V
8V
60
7V
40
6V
20
5V
VGS = 4 V
00
2
4
6
8
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
80
VDS ≥ 10 V
60
TJ = – 55°C
25°C
100°C
40
20
00
2
4
6
8
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.8
VGS = 10 V
0.6
TJ = 100°C
0.4
25°C
– 55°C
0.2
00
10
20
30
40
50
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
2.2
VGS = 10 V
ID = 18 A
1.8
1.4
1
40
38 TJ = 25°C
36
34
32
30
VGS = 10 V
28
26
24
15 V
22
20
0 10 20 30 40 50 60 70 80
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1000
VGS = 0 V
400 TJ = 125°C
100°C
200
25°C
0.6–50 –25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
100
15 20 25 30 35 40 45 50 55 60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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