MW7IC18100GNR1 查看數據表（PDF） - Freescale Semiconductor
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MW7IC18100GNR1
Freescale Semiconductor
MW7IC18100GNR1 Datasheet PDF : 32 Pages
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TYPICAL CHARACTERISTICS — 1900 MHz
33
55
32 PAE
31
Gps
30
29
28 IRL
VDD = 28 Vdc, Pout = 100 W CW
IDQ1 = 180 mA, IDQ2 = 1000 mA
50
45
40
−5
35
−10
30
−15
27
25
−20
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 5. Power Gain, Input Return Loss and Power Added
Efficiency versus Frequency @ Pout = 100 Watts CW
32
60
Gps
31
50
30
PAE
29
28
VDD = 28 Vdc, Pout = 40 W Avg.
IDQ1 = 215 mA, IDQ2 = 800 mA
EDGE Modulation
40
30
−5
20
−10
27 IRL
10
−15
EVM
26
0
−20
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 6. Power Gain, Input Return Loss, EVM and Power
Added Efficiency versus Frequency @ Pout = 40 Watts Avg.
32
31
1000 mA
30
750 mA
29
500 mA
28
IDQ2 = 1500 mA
1250 mA
27
26 VDD = 28 Vdc, IDQ1 = 180 mA
f = 1960 MHz
25
1
10
100 200
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Two - Tone Power Gain versus
Output Power @ IDQ1 = 180 mA
34
33
IDQ1 = 270 mA
32
225 mA
31
180 mA
30
29
135 mA
28
27
26
90 mA
25
1
VDD = 28 Vdc, IDQ2 = 1000 mA
f = 1960 MHz
10
100 200
Pout, OUTPUT POWER (WATTS) CW
Figure 8. Two - Tone Power Gain versus
Output Power @ IDQ2 = 1000 mA
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
6
RF Device Data
Freescale Semiconductor
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