MW7IC008NT1(2009) 查看數據表（PDF） - Freescale Semiconductor
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MW7IC008NT1 Datasheet PDF : 13 Pages
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Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10
μAdc
IDSS
—
—
1
μAdc
IGSS
—
—
10
μAdc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 5.3 μAdc)
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 25 mAdc, Measured in Functional Test)
VGS(th)
1.3
2
2.8
Vdc
VGS(Q)
2
2.8
3.5
Vdc
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10
μAdc
IDSS
—
—
1
μAdc
IGSS
—
—
10
μAdc
Stage 2 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 23 μAdc)
VGS(th)
1.3
2
2.8
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 75 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
0.1
0.3
1
Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 6.5 W CW, f = 900 MHz
Power Gain
Gps
21.5
23.5
31.5
dB
Power Added Efficiency
PAE
30
34
—
%
Input Return Loss
IRL
—
- 15
- 11
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA
Frequency
Gps
(dB)
PAE
(%)
IRL
(dB)
100 MHz @ 11 W CW
23.5
55
- 20
400 MHz @ 9 W CW
22.5
41
- 17
900 MHz @ 6.5 W CW
23.5
34
- 15
1. Part internally matched both on input and output.
(continued)
RF Device Data
Freescale Semiconductor
MW7IC008NT1
3
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