Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, 100 - 1000 MHz Bandwidth
Characteristic
Symbol
Min
Typ
Max
Unit
IMD Symmetry @ 6.8 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
IMDsym
MHz
—
180
—
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point (1)
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
210
—
MHz
Gain Flatness in 500 - 1000 MHz Bandwidth @ Pout = 6 W Avg.
Gain Variation over Temperature
( - 30°C to +85°C)
GF
—
1.35
—
dB
ΔG
—
0.024
—
dB/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
ΔP1dB
—
0.005
—
dBm/°C
Typical CW Performances — 100 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 11 W
CW, f = 100 MHz
Power Gain
Gps
—
23.5
—
dB
Power Added Efficiency
PAE
—
55
—
%
Input Return Loss
IRL
—
- 20
—
dB
Pout @ 1 dB Compression Point, CW
P1dB
—
11
—
W
Typical CW Performances — 400 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 9 W
CW, f = 400 MHz
Power Gain
Gps
—
22.5
—
dB
Power Added Efficiency
PAE
—
41
—
%
Input Return Loss
IRL
—
- 17
—
dB
Pout @ 1 dB Compression Point, CW
P1dB
—
9
—
W
Typical CW Performances — 900 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 6.5 W
CW, f = 900 MHz
Power Gain
Gps
—
23.5
—
dB
Power Added Efficiency
PAE
—
34
—
%
Input Return Loss
IRL
—
- 15
—
dB
Pout @ 1 dB Compression Point, CW
1. Estimated data.
P1dB
—
6.5
—
W
MW7IC008NT1
4
RF Device Data
Freescale Semiconductor