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NE592 查看數據表(PDF) - ON Semiconductor

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NE592
ONSEMI
ON Semiconductor ONSEMI
NE592 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NE592
TYPICAL PERFORMANCE CHARACTERISTICS
60
GAIN 2
50
TA = 25oC
RL = 1kW
40
30
20
VS = +8V
10
VS = +6V
0
-10
1
VS = +3V
5 10
50 100
FREQUENCY MHz
500 1000
Figure 11. Gain vs. Frequency
as a Function of Supply Voltage
12
14 11 8
1
592
47
3
0.2mF
0.2mF
51W 51W RADJ
1kW 1kW
VS = +6V TA = 25oC
Figure 12. Voltage Gain Adjust
Circuit
1000
100
10
VS = +6V
f = 100kHz
TA = 25oC
FIGURE 2
1
.1
.01
1
10 100 1K 10K 100K 1M
RADJ W
Figure 13. Voltage Gain as a
Function of RADJ (Figure 2)
21
20
VS = +6V
19
18
17
16
15
14
-60
-20
20
60 100 140
TEMPERATURE oC
Figure 14. Supply Current as a
Function of Temperature
7.0
6.0
VS = +6V
TA = 25oC
5.0
4.0
3.0
2.0
1.0
0
10
50 100
500 1K
5K 10K
LOAD RESISTANCE W
Figure 17. Output Voltage
Swing as a Function of Load
Resistance
70
60
VS = +6V
TA = 25oC
GAIN 2
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180 200
DIFFERENTIAL INPUT VOLTAGE mV
Figure 15. Differential Overdrive
Recovery Time
7.0
6.0
TA = 25oC
5.0
VOLTAGE
4.0
3.0
CURRENT
2.0
1.0
0
3.0 4.0
5.0 6.0
7.0
8.0
SUPPLY VOLTAGE +V
Figure 16. Output Voltage and
Current Swing as a Function of
Supply Voltage
70
GAIN 2
60
VS = +6V
50
40
30
20
10
0
-60 -20 0 20
60 100 140
TEMPERATURE oC
Figure 18. Input Resistance as a
Function of Temperature
100
90
80
70
60
50
40
30
20
10
0
1
GAIN 2
VS = +6V
TA = 25oC
BW = 10MHz
10
100
1K
10K
SOURCE RESISTANCE W
Figure 19. Input Noise Voltage
as a Function of Source
Resistance
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