NE5550979A-T1-A 查看數據表（PDF） - Renesas Electronics
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NE5550979A-T1-A Datasheet PDF : 13 Pages
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NE5550979A
COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz
VGS
C10
C1
R1
C11
VDS
C1
L1
C22
C23
C20 C21
TYPICAL CHARACTERISTICS 3 (TA = 25°C)
RF: f = 900 MHz VDS = 3.6/4.5/6/7.5/9 V, IDset = 200 mA, Pin = 0 to 32 dBm
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
50
5.0
Pout - 3.6 V
Pout - 4.5 V
45
Pout - 6.0 V
4.5
Pout - 7.5 V
Pout - 9 V
40
IDS - 3.6 V
4.0
IDS - 4.5 V
IDS - 6.0 V
35
IDS - 7.5 V
3.5
IDS - 9 V
30
3.0
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
40
80
Gp - 3.6 V
Gp - 4.5 V
Gp - 6 V
35
Gp - 7.5 V
70
Gp - 9 V
ηadd - 3.6 V
30
ηadd - 4.5 V
60
ηadd - 6.0 V
ηadd - 7.5 V
ηadd - 9 V
25
50
25
2.5
20
40
20
2.0
15
30
15
1.5
10
20
10
1.0
5
10
5
0.5
0
0.0
–5 0 5 10 15 20 25 30 35
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
0
–5 0
0
5 10 15 20 25 30 35
Input Power Pin (dBm)
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 8 of 11
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