NX25F011B 查看數據表（PDF） - Unspecified

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NX25F011B

1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE

Unspecified 

NX25F011B

NX25F021B

NX25F041B

Serial Flash Memory Array

The NX25F011B, NX25F021B, and NX25F041B Serial

Flash memory arrays are organized as 512, 1024, and 2048

sectors of 264-bytes (2,112 bits) each, as shown in

Figure 4. The block size of the device is 32 sectors, yielding

16, 32 and 64 blocks for the NX25F011B, NX25F021B, and

NX25F041B.

The Serial Flash memory of the NX25F011B, NX25F021B,

and NX25F041B is byte-addressable for read operations.

This allows a single byte, or specified sequence of bytes,

to be read without having to clock an entire 264-byte sector

out of the device. Data can be read directly from a sector

in the Flash memory array by using a Read from Sector

command.

Data can be written to the Flash memory array one sector

(264-bytes) at a time through the Serial SRAM using a Write

to Sector command or a Transfer SRAM to Sector com-

1 mand. No pre-erase is needed. Instead, the device

incorporates an auto-erase-before-write feature that

automatically erases the addressed sector at the beginning

of the write operation. After a sector has been written, the

memory array will become busy while it is programming the

2 specified non-volatile memory cells of that sector. This

busy time will not exceed tWP during which time the Flash

array is unavailable for read or write access. The device

can be tested to determine the array’s availability using

3 the Ready/Busy status that is available during most read

commands, through the status register, or on the

Ready/Busy pin.

4 After sector programming is complete and the device is

ready, it is recommended to verify the data in the sector

with the data in the SRAM using the compare command,

(see Write/ Verify Flow towards the end of this data sheet).

5

25F011

S[8:0]

Sector Address:

25F021

S[9:0]

25F041

S[10:0]

Block 16

Sector 511

1FFH

Block 32

Sector 1023

3FFH

Block 64

Sector 2047

7FFH

Sector 480

1E0H

Sector 992

3E0H

Sector 2016

7E0H

Block 0

Sector 31

1FH

Block 0

Sector 31

1FH

Sector 0

000H

Sector 0

000H

Block 0

Sector 31

1FH

Sector 0

000H

Byte 0

000H

Byte Address: B[8:0]

Byte1

001H

Byte 2-261

002H-105H

Byte 262 Byte 263

106H

107H

Byte 0

000H

Byte1

001H

Byte 2-261

002H-105H

Byte 262 Byte 263

106H

107H

1M-bit, 2M-bit, or 4M-bit Serial Flash Memory Array

512, 1024, and 2048 Byte-Addressable Sectors

of 264-Bytes each.

Organized in 16, 32 and 64

blocks of 32 sectors per block.

Byte 0

000H

Byte 1

001H

Byte 2-261

002H-105H

Byte 262 Byte 263

106H

107H

Byte 0

000H

Byte 1

001H

Byte 2-261

002H-105H

Byte 262 Byte 263

106H

107H

Figure 4. NX25F011B, NX25F021B, and NX25F041B Serial Flash Memory Array

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NexFlash Technologies, Inc.

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PRELIMINARY NXSF016F-1201

12/12/01 ©

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