MSM80C86A-10GS 查看數據表（PDF） - Oki Electric Industry
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MSM80C86A-10GS Datasheet PDF : 37 Pages
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¡ Semiconductor
MSM80C86A-10RS/GS/JS
DC CHARACTERISTICS
Parameter
"L" Output Voltage
"H" Output Voltage
Input Leak Current
Output Leak Current
Input Leakage Current
(Bus Hold Low)
Input Leakage Current
(Bus Hold High)
Bus Hold Low Overdrive
Bus Hold High Overdrive
Operating Power
Supply Current
Standby Power
Supply Current
Input Capacitance
Output Capacitance
I/O Capacitance
Symbol
V OL
VOH
ILI
ILO
Min.
—
3.0
VCC –0.4
–1.0
–10
IBHL
50
Typ.
—
—
—
—
—
IBHH
–50
—
IBHLO
—
—
IBHHO
—
—
ICC
—
—
ICCS
—
—
CIN
—
—
COUT
—
—
CI/O
—
—
(VCC = 4.5 to 5.5 V, Ta = –40°C to +85°C)
Max. Unit
Conditions
0.4
V
IOL = 2.5 mA
—
V
IOH = –2.5 mA
IOH = –100 mA
+1.0
mA
0 £ VIN £ VCC
+10
mA
VO = VCC or GND
400
mA
–400
mA
VIN = 0.8 V
*3
VIN = 3.0 V
*4
600
–600
10
mA
mA
mA/MHz
500
mA
*5
*6
VIL = GND
VIH = VCC
VCC = 5.5 V
Outputs Unloaded
VIN = VCC or GND
10
pF
*7
15
pF
*7
20
pF
*7
*3 Test condition is to lower VIN to GND and then raise VIN to 0.8 V on pins 2-16, and 35-39.
*4 Test condition is to raise VIN to VCC and then lower VIN to 3.0 V on pins 2-16, 26-32, and 34-
39.
*5 An external driver must source at least IBHLO to switch this node from LOW to HIGH.
*6 An external driver must sink at least IBHHO to switch this node from HIGH to LOW.
*7 Test Conditions: a) Freq = 1 MHz.
b) Unmeasured Pins at GND.
c) VIN at 5.0 V or GND.
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