PBMB100A6 查看數據表（PDF） - Nihon Inter Electronics
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PBMB100A6 Datasheet PDF : 3 Pages
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PBMB100A6
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
5
VCC= 3 0 0 V
I C= 1 0 0 A
VG= ± 1 5 V
2 TC=25℃
toff
ton
1
tr
0.5
tf
0.2
0.1
0.05
1
10
100
Series Gate Impedance RG (Ω)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
200
TC=25℃
TC= 1 2 5 ℃
180
160
140
120
100
80
60
40
20
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
500
IF=100A
TC=25℃
200
trr
100
50
20
IRrM
10
50
100
200
300
400
500
600
-di/dt (A/μs)
1000
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
Fig.10- Reverse Bias Safe Operating Area (Typical)
R G= 7 .5 Ω
VGE = ±1 5 V
TC≦125℃
200
400
600
800
Collector to Emitter Voltage V CE (V)
1
5x10 -1
2x10 -1
1x10 -1
5x10 -2
2x10 -2
1x10 -2
5x10 -3
2x10 -3
1x10
-3
10
-5
Fig.11- Transient Thermal Impedance
FRD
IGBT
TC= 2 5 ℃
1 Shot Pulse
10 -4
10 -3
10 -2
10 -1
1
10 1
Time t (s)
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