PBMB200A6 查看數據表（PDF） - Nihon Inter Electronics
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PBMB200A6 Datasheet PDF : 3 Pages
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PBMB200A6
Fig.1- Output Characteristics (Typical)
400
VGE=20V 12V
TC= 2 5 ℃
15V
10V
300
200
9V
100
00
16
14
12
10
8
6
4
2
0
0
8V
7V
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125℃
IC=80A
400A
200A
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
100000
50000
20000
Cies
Coes
Cres
VGE=0V
f=1MHZ
TC=25℃
10000
5000
2000
1000
500
200
100
0.2
0.5 1
2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC= 2 5 ℃
IC=80A
400A
14
200A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
16
RL=1.5Ω
350 TC=25℃
14
300
12
250
10
200
8
VCE= 3 0 0 V
150
6
200V
100
100V
4
50
2
0
0
0
150
300
450
600
750
900
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1
VCC= 3 0 0 V
0.9 RG=3.6Ω
VGE=±15V
0.8 TC=25℃
0.7
0.6
0.5
toff
0.4
0.3
ton
0.2
tf
0.1
00
50
100
150
Collector Current IC (A)
tr
200
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