RB160M-30TR 查看數據表（PDF） - ROHM Semiconductor

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RB160M-30TR

Schottky barrier diode

ROHM Semiconductor 

Schottky barrier diode

RB160M-30

Applications

General rectification

Dimensions (Unit : mm)

1.6±0.1

0.1±0.1

　　　 0.05

Data Sheet

Land size figure (Unit : mm)

1.2

Features

1) Small power mold type. (PMDU)

2) Low IR.

3) High reliability

r Construction

ded fo Silicon epitaxial planer

0.

1

1

0.9±0.1

ROHM :

JEDEC :SOD-123

Manufacture Date

0.8±0.1

PMDU

Structure

Taping specifications (Unit : mm)

4.0±0.1 2.0±0.05

φ1.55±00.0.055

0.25±0.05

mmeensigns 1.81±0.1

4.0±0.1

φ11..00±00.1.1

o D Absolute maximum ratings (Ta=25°C)

c Parameter

Symbol

Limits

Unit

Reverse voltage (repetitive peak)

e w Reverse voltage (DC)

Average rectified forward current

VRM

30

V

VR

30

V

Io

1

A

R e Forward current surge peak (60Hz / 1cyc)

IFSM

30

A

Junction temperature

Tj

125

C

t N Storage temperature

Tstg

40 to 125

C

(*1)Mounted on epoxy board. 180° Half sine wave

o Electrical characteristic (Ta=25°C)

N Parameter

Symbol Min. Typ. Max.

Unit

1.5MAX

Conditions

Forward voltage

Reverse current

VF1

-

0.39 0.46

V

IF=0.5A

VF2

-

0.43 0.48

V

IF=1.0A

IR1

-

3.0 20

A

VR=15V

IR2

-

9.0 50

A

VR=30V

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2015.09 - Rev.D

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