RB160M-30TR 查看數據表（PDF） - ROHM Semiconductor
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RB160M-30TR Datasheet PDF : 6 Pages
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RB160M-30
Electrical characteristic curves
Data Sheet
1
Ta=75℃
Ta=125℃
0.1
Ta=25℃
10000
1000
100
1000
Ta=125℃
Ta=75℃
100
f=1MHz
Ta=25℃
Ta=-25℃
0.01
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
10
1
0.1
0.01
0
Ta=-25℃
5 10 15 20 25 30
REVERSE VOLTAGE：VR(V)
10
1
0
for 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VF-IF CHARACTERISTICS
450
d Ta=25℃
440
IF=1A
n=30pcs
e 430
d 420
n s AVE:424.2mV
410
e n 400
m ig VF DISPERSION MAP
VR-IR CHARACTERISTICS
100
90
Ta=25℃
80
VR=30V
n=30pcs
70
60
50
40
30
AVE:8.172uA
20
10
0
IR DISPERSION MAP
VR-Ct CHARACTERISTICS
400
390
Ta=25℃
380
f=1MHz
VR=0V
370
n=10pcs
360
350
340
AVE:324.4pF
330
320
310
300
Ct DISPERSION MAP
s 150
20
1cyc
Ifsm
m e 8.3ms
15
o 100
100
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
D AVE:98.0A
ec 50
10
AVE:11.7ns
5
50
Ifsm
8.3ms 8.3ms
1cyc
w 0
R e IFSM DISRESION MAP
0
trr DISPERSION MAP
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
t N Mounted on epoxy board
150
1000
1
IM=10mA
IF=0.5A
o Ifsm
t
100
1ms time
Rth(j-a)
0.8
DC
D=1/2
N100
300us
0.6
10
Rth(j-c)
0.4 Sin(θ＝180)
50
1
0.2
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
0.001 0.01 0.1
1
10
TIME:t(s)
100 1000
Rth-t CHARACTERISTICS
0
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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2015.09 - Rev.D
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