RD30HVF1 查看數據表（PDF） - MITSUBISHI ELECTRIC
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RD30HVF1 Datasheet PDF : 8 Pages
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
Pin-Po CHARACTERISTICS
Ta=+25°C
50 f=175MHz
Po
Vdd=12.5V
Idq=0.5A
40
30
Gp
20
100
80
ηｄ
60
40
10
20
Ｉｄｄ
Pin-Po CHARACTERISTICS
50
100
Po
40
80
30
ηd
60
20
Ta=25°C
40
f=175MHz
Vdd=12.5V
Idq=0.5A
10
20
Idd
0
0
0
10
20
30
Pin(dBm)
0
0
0
0.5
1
1.5
2
2.5
Pin(W)
Vdd-Po CHARACTERISTICS
80
Ta=25°C
f=175MHz
Pin=1.0W
60
Idq=0.5A
Zg=ZI=50 ohm
16
14
12
Po
10
40
8
Idd
6
20
4
2
0
0
4
6
8
10
12
14
Vdd(V)
Vgs-Ids CHARACTERISTICS 2
8
Vds=10V
Tc=-25~+75°C
6
-25°C
+25°C
+75°C
4
2
0
2
3
4
5
Vgs(V)
TEST CIRCUIT(f=175MHz)
RD30HVF1
MITSUBISHI ELECTRIC
4/8
10 Jan 2006
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