RD30HVF1 查看數據表（PDF） - MITSUBISHI ELECTRIC
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RD30HVF1 Datasheet PDF : 8 Pages
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
RF-in
Vgg
Vdd
C1
9.1kOHM
L1
8.2kOHM
100OHM
10pF L2
C2
L1
175MHz
RD30HVF1
56pF
100pF
100pF
8pF
C3
56pF
RF-OUT
33pF100pF
12
27
32
34
51
90
100
43pF 5pF 50pF
10
32
44
54
90
100
8
4.8
10.8
C1:2200pF 10uF in parallel
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
Note:Board material-Teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
RD30HVF1
MITSUBISHI ELECTRIC
5/8
10 Jan 2006
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