RJP4301APP-00-T2 查看數據表（PDF） - Renesas Electronics

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RJP4301APP-00-T2

Nch IGBT for Strobe Flash

Renesas Electronics 

RJP4301APP

Application Example

IXe

Vtrig

CM

+

–

Trigger Signal Vtrig

VCM

RG

VCE

VG

IGBT

IGBT

VG

Gate Voltage

Recommended Operation Maximum Operation

Conditions

Conditions

VCM

300 V

350 V

ICP

180 A

200 A

CM

1200 μF

1500 μF

VGE

28 V

26 V

Xe Tube Current IXe

Precautions on Usage

1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And

peak reverse gate current during turn-off must become less than 1 A. (In general, when RG(off) = 30 Ω, it is satisfied.)

2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the

device from electrostatic charge.

3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 200 A :

full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 3

seconds.

4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.

REJ03G1709-0300 Rev.3.00 Oct 14, 2009

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