RMPA2265 查看數據表（PDF） - Fairchild Semiconductor

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RMPA2265

Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz

Fairchild Semiconductor 

Electrical Characteristics (1850 to 1910 MHz)1

Symbol

Parameter

f

Operating Frequency

WCDMA Operation

Min Typ Max Units

1850

1910 MHz

Comments

Gp

Power Gain

Po

Linear Output Power

PAEd

Itot

PAEd (digital) @ +27.5dBm

PAEd (digital) @ +16dBm

PAEd (digital) @ +16dBm

High Power Total Current

Low Power Total Current

Adjacent Channel Leakage Ratio

ACLR1

±5.00MHz Offset

1850–1910MHz

ACLR2

±10.00MHz Offset

1850–1910MHz

General Characteristics

26

28

26

27.5

16

39

9

25

420

120

-40

-42

-54

-66

dB

dB

dBm

dBm

%

%

%

mA

mA

dBc

dBc

dBc

dBc

Po = +27.5dBm, Vmode = 0V

Po = +16dBm, Vmode ≥ 2.0V

Vmode = 0V

Vmode ≥ 2.0V

Vmode = 0V

Vmode ≥ 2.0V

Vmode ≥ 2.0V, Vcc = 1.4V

Po = +27.5dBm, Vmode = 0V

Po = +16dBm, Vmode ≥ 2.0V

WCDMA Modulation 3GPP

3.2 03-00 DPCCH+1 DCDCH

Po = +27.5dBm, Vmode = 0V

Po = +16dBm, Vmode ≥ 2.0V

Po = +27.5dBm, Vmode = 0V

Po = +16dBm, Vmode ≥ 2.0V

VSWR

Input Impedance

NF

Noise Figure

Rx No

2fo – 5fo

S

Receive Band Noise Power

Harmonic Suppression3

Spurious Outputs2, 3

Ruggedness with Load Mismatch3

Tc

Case Operating Temperature

DC Characteristics

2.0:1

4

dB

-139

dBm/Hz Po ≤ +27.5dBm, 1930 to 1990MHz

-50

dBc Po ≤ +27.5dBm

-60

dBc Load VSWR ≤ 5.0:1

10:1

No permanent damage

-30

85

°C

Iccq

Iref

Icc(off)

Quiescent Current

Reference Current

Shutdown Leakage Current

45

mA Vmode ≥ 2.0V

5

mA Po ≤ +27.5dBm

1

5

µA No applied RF signal

Notes:

1. All parameters met at TC = +25°C, VCC = +3.4V, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise noted.

2. All phase angles

3. Guaranteed by design

Recommended Operating Conditions

Symbol

f

VCC1, VCC2

Vref

Vmode

POUT

Parameter

Operating Frequency

Supply Voltage

Reference Voltage

Operating

Shutdown

Bias Control Voltage

Low-Power

High-Power

Linear Output Power (low-power)

1920–1980 MHz (high power)

1850–1910 MHz (high power)

TC

Case Operating Temperature

Min

1850

3.0

2.7

0

1.8

0

-30

Typ

3.4

2.85

2.0

Max

1980

4.2

3.1

0.5

3.0

0.5

+16

+28

+27.5

+85

Units

MHz

V

V

V

V

V

dBm

dBm

dBm

°C

RMPA2265 Rev. K

3

www.fairchildsemi.com

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