RMPA2265 查看數據表（PDF） - Fairchild Semiconductor

零件编号

产品描述 (功能)

生产厂家

RMPA2265

Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz

Fairchild Semiconductor 

Efficiency Improvement Applications

In addition to high-power/low-power bias modes, the efficiency

of the PA module can be significantly increased at backed-off RF

power levels by dynamically varying the supply voltage (Vcc)

applied to the amplifier. Since mobile handsets and power

amplifiers frequently operate at 10–20 dB back-off, or more, from

maximum rated linear power, battery life is highly dependent on

the DC power consumed at antenna power levels in the range of

0 to +16dBm. The reduced demand on transmitted RF power

allows the PA supply voltage to be reduced for improved

efficiency, while still meeting linearity requirements for WCDMA

modulation with excellent margin. High-efficiency DC-DC

converters are now available to implement switched-voltage

operation.

DC Turn On Sequence:

1. Vcc1 = Vcc2 = 3.4V (typical)

2. Vref = 2.85V (typical)

3. High-Power: Vmode = 0V (Pout > 16dBm)

Low-Power: Vmode = 2.0V (Pout < 16dBm)

With the PA module in low-power mode (Vmode = 2.0V) at

+16dBm output power and supply voltages reduced from 3.4V

nominal down to 1.2V, power-added efficiency is more than

doubled from 9 percent to 25 percent (Vcc = 1.2V) while

maintaining a typical ACLR1 of -40dBc and ACLR2 of less than

-54 dBc. Operation at even lower levels of Vcc supply voltage

are possible with a further restriction on the maximum RF output

power.

RMPA2265 Rev. K

8

www.fairchildsemi.com

Share Link: