RMPA1765 查看數據表（PDF） - Fairchild Semiconductor
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RMPA1765
Fairchild Semiconductor
RMPA1765 Datasheet PDF : 8 Pages
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Absolute Maximum Ratings(1)
Symbol
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
Parameter
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Value
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Units
V
V
V
dBm
°C
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics(1)
Symbol
Parameter
f
Operating Frequency
CDMA OPERATION
SSg Small-Signal Gain
Gp Power Gain
Po Linear Output Power
PAEd
Itot
ACPR1
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
±1.25MHz Offset
ACPR2 ±2.25MHz Offset
GENERAL CHARACTERISTICS
VSWR Input Impedance
NF Noise Figure
Rx No Receive Band Noise Power
2fo-5fo Harmonic Suppression
S
Spurious Outputs(2)(3)
Ruggedness w/ Load
Mismatch(3)
Tc Case Operating Temperature
DC CHARACTERISTICS
Iccq Quiescent Current
Iref Reference Current
Icc(off) Shutdown Leakage Current
Min. Typ. Max. Units
1720
1780 MHz
Comments
26
28
26
28
16
38
9
25
490
130
dB
dB
dB
dBm
dBm
%
%
%
mA
mA
Po = 0dBm
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode = 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode ≥ 2.0V, Vcc = 1.4V
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode = 2.0V
-50
dBc Po = +28dBm; Vmode = 0V
-52
dBc Po = +16dBm; Vmode = 2V
-60
dBc Po = +28dBm; Vmode = 0V, IS-95
-68
dBc Po = +16dBm; Vmode = 2V
2.0:1
4
-139
-30
-60
10:1
dB
dBm/
Hz
dBc
dBc
Po ≤ +28dBm; 1840MHz to 1870MHz
Po ≤ +28dBm
Load VSWR ≤ 5.0:1
No permanent damage.
-30
85 °C
45
5
8
1
5
mA Vmode ≥ 2.0V
mA Po < +28dBm
µA No applied RF signal.
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V, f = 1750 MHz and load VSWR ≤ 1.2:1, unless
otherwise noted.
2. All phase angles.
3. Guaranteed by design.
RMPA1765 Rev. E
2
www.fairchildsemi.com
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